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TYPICAL PERFORMANCE CURVES (R)
1200V APT33GF120B2_LRDQ2(G) APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
(B2)
T-Max(R)
TO-264
(L)
* Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT33GF120B2_LRDQ2(G)
UNIT Volts
1200 30 64 30 75 75A @ 1200V 357 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.0
2 2
5.5 2.5 3.1
6.5 3.0 100 6000
120
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
A nA
11-2005 052-6280 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT33GF120B2_LRDQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 25A TJ = 150C, R G = 4.3, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 4.3 I C = 25A VGE = 15V MIN TYP MAX UNIT pF V nC
1855 230 110 10 170 19 100 75 14 17 185 110 1315 1930 1515 14 17 220 135 1325 3325 2145 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 4.3 I C = 25A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.35 0.61 6.10
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.)
11-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6280
Rev A
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
100 90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0
APT33GF120B2_LRDQ2(G)
15V 13V 12V 11V
TJ = 25C
TJ = -55C
TJ = 125C
10V
9V 8V 7V
80 70 60 50 40 30 20 10
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 25A C T = 25C
J
0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ = -55C
8 6 4 2 0 0 20
VCE = 960V
TJ = 25C TJ = 125C
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
4
IC = 50A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
5
4
IC = 50A IC = 25A
3
IC = 25A
3
2
IC = 12.5A
2
IC = 12.5A
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10
80 70 60 50 40 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 11-2005 052-6280 Rev A
(NORMALIZED)
20
VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
250
APT33GF120B2_LRDQ2(G)
15
200
VGE =15V,TJ=125C VGE =15V,TJ=25C
150
10
100
5
60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20 10 60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 10,000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 800V V CE = +15V V GE R = 4.3
G
0
VCE = 800V TJ = 25C, or 125C RG = 4.3 L = 100H
50
60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
160 140
RG = 4.3, L = 100H, VCE = 800V
0
VCE = 800V RG = 4.3 L = 100H
RG = 4.3, L = 100H, VCE = 800V
TJ = 25 or 125C,VGE = 15V
120
tf, FALL TIME (ns)
tr, RISE TIME (ns)
100 80 60 40 20
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
0
60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
4,000 3,500 3,000 2,500 2,000 1,500 1,000 500
TJ = 25C
= 800V V CE = +15V V GE R = 4.3
G
0
8,000
TJ = 125C
TJ = 125C
6,000
4,000
2,000
TJ = 25C
60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 18,000
SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
J
0
60 50 40 30 20 10 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
9,000
= 800V V CE = +15V V GE R = 4.3
G
0
Eon2,50A
SWITCHING ENERGY LOSSES (J)
16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0 0
8,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0
Eon2,50A
Eoff,50A Eoff,25A Eon2,12.5A Eoff,12.5A
11-2005
Eoff,50A Eoff,25A
Eon2,25A Eon2,12.5A Eoff,12.5A
Eon2,25A
Rev A
052-6280
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies
80 70 60 50 40 30 20 10
APT33GF120B2_LRDQ2(G)
1,000 C, CAPACITANCE ( F) 500 Coes 100 50 Cres
P
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.40 0.35 D = 0.9 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.3 0.7 0.5
ZJC, THERMAL IMPEDANCE (C/W)
Note:
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
100 FMAX, OPERATING FREQUENCY (kHz) 50
RC MODEL Junction temp. (C) 0.125 Power (watts) 0.225 Case temperature. (C) 0.148 0.0138
F
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.3
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
5
10
052-6280
Rev A
11-2005
APT33GF120B2_LRDQ2(G)
APT40DQ120
10% td(on)
Gate Voltage
TJ = 125C
V CC
IC
V CE
tr 90%
Collector Current
5%
10%
5%
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
td(off) 90% tf 10%
TJ = 125C
Collector Voltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6280
Rev A
11-2005
TYPICAL PERFORMANCE CURVES
APT33GF120B2_LRDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 25A Forward Voltage IF = 50A IF = 25A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT33GF120B2_LRDQ2(G)
UNIT Amps
40 63 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.46 2.95 1.83
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 , THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 10-5 10-4 0.5 0.3
Note:
26 350 570 4 430 2200 9 210 3400 29 -
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 40A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
D = 0.9
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.0442 0.00222
0.242
0.00586
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6280
0.324
0.0596
Rev A
Power (watts)
11-2005
120 100 80 60 40 20 0 TJ = 125C TJ = 25C TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 20A 40A
T = 125C J V = 800V
R
600 trr, REVERSE RECOVERY TIME (ns) 500 400 300 200 100 0
APT33GF120B2_LRDQ2(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
80A 40A 20A
TJ = 175C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
80A
80A
40A
20A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30
Duty cycle = 0.5 T = 175C
J
1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
Qrr trr trr IRRM
1.0 0.8 0.6 0.4 0.2 0.0
Qrr
20 10
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 200
CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
11-2005
50
Rev A
052-6280
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035BLL
APT33GF120B2_LRDQ2(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
T-MAX(R) (B2) Package Outline
e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 15.49 (.610) 16.26 (.640) 1.49 (.059) 2.49 (.098) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043)
Collector (Cathode)
0.40 (.016) 0.79 (.031)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Gate Collector (Cathode) Emitter (Anode)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6280
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Rev A
0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118)
11-2005
Gate Collector (Cathode) Emitter (Anode)

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